DS35M2GB-IB_3.3V/1.8V 2G-bit SPI NAND FLASH
DS35X2GBXXX is a 256Mx8bit with spare 16Mx8 bit capacity. The device is offered in 3.3/1.8 Vcc Power Supply, and with SPI interface.
  • VCC = 1.8/3.3 Volt core supply voltage for Program, Erase and Read operations
  • Block size: (128K + 8K) bytes
  • (2K + 128) bytes x 64 pages x 2048 blocks
  • Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3
详细内容


FEATURES

■Serial Peripheral Interface

-Mode 0 and Mode 3

■Standard,Dual,Quad SPI

-Standard SPI:SCLK,CS#,SI,SO

-Dual SPI:SCLK,CS#,SIO0,SIO1

-Quad SPI:SCLK,CS#,SIO0,SIO1,SIO2,SIO3

■SUPPLY VOLTAGE

-VCC=1.8/3.3 Volt core supply voltage for

Program,Erase and Read operations

■PAGE READ/PROGRAM

-(2048+128 spare)byte

-Random access:25us(w/o ECC),130us(w/ECC)

-Serial access:83MHz(1.8V)104MHz(3.3V)

-Page program time:300us(Typ)

■FAST BLOCK ERASE

-Block size:(128K+8K)bytes

-Block erase time:2ms(Typ)

■MEMORY CELL ARRAY

-(2K+128)bytes x 64 pages x 2048 blocks

■ELECTRONIC SIGNATURE

-Manufacturer Code

-Device Code

■STATUS REGISTER

■HARDWARE DATA PROTECTION

-Enable/Disable protection with WP#Pin

-Top or Bottom,Block selection combination

■DATA RETENTION

-Max cycling:60K Program/Erase cycles

-Data retention:10 Years(8bit/512byte ECC)

-Internal ECC can be enabled(8bit ECC)

-Block zero is a valid block and will be valid for at least 1K program-erase cycles with ECC