The ZB25VQ40B of non-volatile flash memory device supports the standard Serial Peripheral Interface(SPI).Traditional SPI single bit serial input and output(Single I/O or SIO)is supported as well as optional two bit(Dual I/O or DIO)and four bit(quad I/O)serial protocols.This multiple width interface is called SPI Multi-I/O or MIO.

FEATURES

-Power Supply Voltage

-Single 2.3V-3.6V supply

4M bit Serial Flash

-4 M-bit/512K-Byte/2,048 pages

-256 Bytes per programmable page

-Uniform 4K-Byte Sectors,32K/64K-Byte Blocks

New Family of SpiFlash Memories

-Standard SPI:CLK,CS#,DI,DO,WP#,HOLD#

-Dual SPI:CLK,CS#,DI,DO,WP#,HOLD#

-Quad SPI:CLK,CS#,IO0,IO1,IO2,IO3

-Software Reset

-Auto-increment Read capability

Temperature Ranges

-Industrial(-40°C to 105°C)

-Industrial(-40°C to 125°C)

Low power consumption

-10μA typical standby current

-1μA typical power down current

Efficient“Continuous Read”and Quad Read

-Continuous Read with 8/16/32/64-Byte Wrap

-Quad Peripheral Interface reduces instruction overhead

Flexible Architecture with 4KB sectors

-Sector Erase(4K-Bytes)

-Block Erase(32K/64K-Bytes)

-Page Program up to 256 Bytes

Endurance and Data Retention

-More than 100K erase/program cycles

-More than 20-year data retention

Advanced Security Feature

-Software and Hardware Write-Protect

-Power Supply Lock-Down and OTP protection

-Top/Bottom,Complement array protection

-128-Bit Unique ID for each device

-Serial Flash Discoverable Parameters (SFDP)Register

-3X512-Byte Security Registers with OTP locks

-Volatile&Non-volatile Status Register Bits

High performance program/erase speed

-Page program time:350us typical

-Sector erase time:25ms typical

-Block erase time:250ms typical

-Chip erase time:2s typical

Package Options

-SOP8-150mil/208mil

-TFBGA24

-TSSOP8-173mil

-DFN8(4*3*0.55mm)

-DFN8(2*3*0.55mm)

-All Pb-free packages are RoHS compliant